参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current300 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time29 ns
Rds On - Drain-Source Resistance1.5 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
MXHTS85412999
Qg - Gate Charge166 nC
Mounting StyleSMD/SMT
Package / CaseHSOF-8
JPHTS8541290100
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Factory Pack Quantity2000
CNHTS8541290000
DescriptionMOSFET MOSFET_(75V 120V(
BrandInfineon Technologies
Channel ModeEnhancement
Product TypeMOSFET
TARIC8541290000
Fall Time48 ns
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
Unit Weight0.027418 oz
SubcategoryMOSFETs
Part # AliasesIAUT300N10S5N015 SP001416130
Pd - Power Dissipation375 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)