参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT190 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 245 mV
Width1.4 mm
Height1 mm
Length3.05 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 1 A, 2 V, 60 at 1.5 A, 2 V, 12 at 3 A, 2 V
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
CNHTS8541210000
DescriptionBipolar Transistors - BJT PNP SuperSOT
BrandDiodes Incorporated
ImageDiodes Incorporated FMMT720TA
Product TypeBJTs - Bipolar Transistors
SeriesFMMT720
TARIC8541210000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation625 mW
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)