参数项参数值
参数项参数值
Forward Transconductance - Min38 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current45 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance4.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
MXHTS85412999
Width6.22 mm
Height2.3 mm
Length6.5 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge32 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time7 ns
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandInfineon Technologies
SeriesOptiMOS 5
RoHS Details
ImageInfineon Technologies IPD053N06NATMA1
Unit Weight0.139332 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation83 W
Part # AliasesIPD053N06N SP000962138
USHTS8541290075
DescriptionMOSFET N-Ch 60V 45A DPAK-2
Vds - Drain-Source Breakdown Voltage60 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time12 ns