参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage- 1.7 V
TechnologySi
Id - Continuous Drain Current- 85 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 16 V, + 5 V
Rds On - Drain-Source Resistance7.7 mOhms
Qg - Gate Charge80 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
BrandInfineon Technologies
ManufacturerInfineon
TARIC8541290000
Product CategoryMOSFET
Channel ModeEnhancement
Factory Pack Quantity2500
Product TypeMOSFET
DescriptionMOSFET MOSFET_(20V 40V)
SubcategoryMOSFETs
USHTS8541290095
Part # AliasesIPD85P04P4L-06 SP002325778
Pd - Power Dissipation88 W
Vds - Drain-Source Breakdown Voltage- 40 V
Number of Channels1 Channel