参数项参数值
参数项参数值
Forward Transconductance - Min100 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Width1.6 mm
Height1.45 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge0.6 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
ImageVishay / Siliconix 2N7002K-T1-E3
RoHS Details
Unit Weight0.000282 oz
Series2N7002K
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation350 mW
BrandVishay / Siliconix
Part # Aliases2N7002K-E3
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 60V Vds 20V Vgs SOT-23
ManufacturerVishay
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541210095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)