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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min0.1 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Qg - Gate Charge3 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingReel
Fall Time10 ns
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
ManufacturerRectron
BrandRectron
Product TypeMOSFET
DescriptionMOSFET SOT-23 MOSFET
Product CategoryMOSFET
Pd - Power Dissipation0.35 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time50 ns