参数项参数值
参数项参数值
Forward Transconductance - Min6.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.1 ns
Rds On - Drain-Source Resistance78 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6.4 ns
Width1.3 mm
Height1.1 mm
Length2.9 mm
Qg - Gate Charge2.6 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time4.3 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRLML0040TRPBF
Unit Weight0.000282 oz
RoHS Details
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.3 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 40V 3.6A 56mOhm 2.6nC Qg
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time5.4 ns
Moisture Sensitivity Level1 (Unlimited)