参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 500 mA, 3 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min120
Width5.5 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
RoHS Details
Unit Weight0.009185 oz
Series2SD1758
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1000 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 32V 2A
USHTS8541290095