参数项参数值
参数项参数值
DC Current Gain hFE Max420 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Width1.35 mm
Height1 mm
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541210101
CAHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CNHTS8541210000
Factory Pack Quantity3000
BrandNexperia
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS LOW NOISE TAPE-7
ManufacturerNexperia
TARIC8541210000
ImageNexperia BC850CW,115
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000176 oz
SubcategoryTransistors
Part # Aliases934022080115
Pd - Power Dissipation200 mW
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)