参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current0.8 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Height4.7 mm
Length4.7 mm
ManufacturerON Semiconductor
KRHTS8541219000
PackagingAmmo Pack
Factory Pack Quantity2000
Minimum Operating Temperature- 55 C
BrandON Semiconductor / Fairchild
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Package / CaseTO-92-3 Kinked Lead
CAHTS8541210000
SubcategoryTransistors
TARIC8541210000
RoHS Details
Product TypeBJTs - Bipolar Transistors
Width3.93 mm
Mounting StyleThrough Hole
ImageON Semiconductor / Fairchild PN2907ATAR
DescriptionBipolar Transistors - BJT PNP Transistor General Purpose
MXHTS85412101
Product CategoryBipolar Transistors - BJT
SeriesPN2907A
USHTS8541210095
Unit Weight0.008466 oz
CNHTS8541210000
Part # AliasesPN2907ATAR_NL
Pd - Power Dissipation625 mW
Moisture Sensitivity LevelNot Applicable