SI2312CDS-T1-GE3

SI2312CDS-T1-GE3

厂牌：Siliconix - Vishay Siliconix

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000044446842

描述：MOSFET N-CH 20V 6A SOT-23

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min24 S

Vgs th - Gate-Source Threshold Voltage450 mV

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current6 A

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Length2.9 mm

Height1.45 mm

JPHTS8541210101

Typical Turn-On Delay Time8 ns

CAHTS8541210000

Rds On - Drain-Source Resistance31.8 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time31 ns

RoHS Details

Package / CaseSOT-23-3

ImageVishay Semiconductors SI2312CDS-T1-GE3

Factory Pack Quantity3000

PackagingCut Tape

PackagingMouseReel

PackagingReel

Maximum Operating Temperature+ 150 C

Width1.6 mm

TARIC8541290000

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

ManufacturerVishay

DescriptionMOSFET 20V Vds 8V Vgs SOT-23

Qg - Gate Charge18 nC

MXHTS85412101

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

Fall Time8 ns

CNHTS8541290000

Part # AliasesSI2312CDS-GE3 SI7621DN-T1-GE3

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time17 ns

Moisture Sensitivity Level1 (Unlimited)