参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 50 mA, 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage130 mV
MXHTS85412999
DC Collector/Base Gain hfe Min180 at 50 mA, 2 V
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
Series2SxR
RoHS Details
ImageROHM Semiconductor 2SCR513P5T100
Product CategoryBipolar Transistors - BJT
Unit Weight0.021494 oz
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SCR513P5
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 50V Vceo 1A Ic MPT3