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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current400 mA
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current400 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage120 mV
MXHTS85412999
DC Collector/Base Gain hfe Min270
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor 2SD2696T2L
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Part # Aliases2SD2696
DescriptionBipolar Transistors - BJT NPN Low VCE(sat) Transistor
USHTS8541290095