参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 30 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 150 mV
DC Collector/Base Gain hfe Min270
Width1.7 mm
Length2 mm
Package / CaseTUMT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SB1733TL
RoHS Details
Series2SB1733
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation400 mW
Part # Aliases2SB1733
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT 30V 1A PNP LOW
Moisture Sensitivity Level1 (Unlimited)