参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412999
DC Collector/Base Gain hfe Min270
Width0.8 mm
Height0.5 mm
Length1.2 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseVMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Series2SC5663
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SC5663T2L
Unit Weight0.000282 oz
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity8000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SC5663
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 12V 0.5A