参数项参数值
参数项参数值
DC Current Gain hFE Max1200 at 500 mA, 6 V
Gain Bandwidth Product fT110 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max25 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min1200
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor 2SD2153T100W
TARIC8541290000
RoHS Details
Series2SD2153
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 25V 2A 4PIN
USHTS8541290095