参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min200
CNHTS8541210000
Package / CaseUMT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SCR502U3T106
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT NPN Gen Purpse Trans UMT3
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)