参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
MXHTS85412999
DC Collector/Base Gain hfe Min180
Width1.6 mm
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Series2SC3906K
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SC3906KT146R
Unit Weight0.002249 oz
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation300 mW
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 120V 50MA
Moisture Sensitivity Level1 (Unlimited)