参数项参数值
参数项参数值
DC Current Gain hFE Max450 at - 50 mA, - 3 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 3 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min180 at - 50 mA, - 3 V
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SAR533P5T100
Product CategoryBipolar Transistors - BJT
Series2SxR
Unit Weight0.005051 oz
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SAR533P5
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP -50V Vceo -3A Ic MPT3