参数项参数值
参数项参数值
DC Current Gain hFE Max500 at - 500 mA, - 2 V
Gain Bandwidth Product fT330 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 3 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min200 at - 500 mA, - 2 V
Package / CaseSC-62-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SAR552P5T100
RoHS Details
Series2SxR
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SAR552P5
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP -30V Vceo -3A Ic MPT3
ManufacturerROHM Semiconductor