参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current- 150 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
CNHTS8541290000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SA1576U3T106Q
Unit Weight0.002523 oz
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
USHTS8541210095
DescriptionBipolar Transistors - BJT PNP -50V -0.15A 0.2W SOT-323; SC-70; UMT3
Moisture Sensitivity Level1 (Unlimited)