参数项参数值
参数项参数值
DC Current Gain hFE Max680 at 100 mA, 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage120 mV
DC Collector/Base Gain hfe Min270 at 100 mA, 2 V
MXHTS85412999
KRHTS8541299000
Package / CaseSC-62-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1000
CNHTS8541290000
DescriptionBipolar Transistors - BJT NPN 30V Vceo 1A Ic MPT3
BrandROHM Semiconductor
ImageROHM Semiconductor 2SCR293P5T100
Series2SxR
Product TypeBJTs - Bipolar Transistors
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.006899 oz
SubcategoryTransistors
Part # Aliases2SCR293P5
Pd - Power Dissipation500 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)