参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT240 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 5 A
Collector- Emitter Voltage VCEO Max- 30 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.2 V
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseMPT-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1000
CNHTS8541210000
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT Trans GP BJT PNP 30V 5A
Product TypeBJTs - Bipolar Transistors
ImageROHM Semiconductor 2SAR542PT100
Series2SxR
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Part # Aliases2SAR542P
Pd - Power Dissipation500 mW
USHTS8541290095