参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 12 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 110 mV
DC Collector/Base Gain hfe Min270
Width1.25 mm
Height0.8 mm
Length2 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SB1689T106
TARIC8541290000
Unit Weight0.000176 oz
RoHS Details
Series2SB1689
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SB1689
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP 12V 1.5A
USHTS8541290095