参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT260 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 12 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
DC Collector/Base Gain hfe Min270
Width0.8 mm
Height0.7 mm
MXHTS85412999
Length1.6 mm
CNHTS8541290000
KRHTS8541299000
Package / CaseSOT-416-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SA2018TL
Series2SA2018
Unit Weight0.000212 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SA2018
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP 12V 0.5A
Moisture Sensitivity Level1 (Unlimited)