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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage140 mV
DC Collector/Base Gain hfe Min270
Width1.7 mm
Length2 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD2701TL
TARIC8541290000
RoHS Details
Series2SD2701
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation800 mW
Part # Aliases2SD2701
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 12V 2A
USHTS8541290095