参数项参数值
参数项参数值
DC Current Gain hFE Max390 at - 100 mA, - 3 V
Gain Bandwidth Product fT380 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 700 mA
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 700 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SAR514P5T100
TARIC8541290000
RoHS Details
Series2SxR
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SAR514P5
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP -80V Vceo -0.7A Ic MPT3
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)