参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 50 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 150 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541219000
Package / CaseEMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageROHM Semiconductor 2SAR523EBTL
RoHS Details
Series2SAR523EB
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
BrandROHM Semiconductor
Part # Aliases2SAR523EB
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP General Purpose Amplification Transistor
ManufacturerROHM Semiconductor
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)