参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage130 mV
DC Collector/Base Gain hfe Min180
CNHTS8541290000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SCR573D3FRATL
BrandROHM Semiconductor
Unit Weight0.050459 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation10 W
DescriptionBipolar Transistors - BJT NPN 50V 3A 10W TO-252(DPAK)
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)