参数项参数值
参数项参数值
DC Current Gain hFE Max390 at - 1 mA, - 6 V
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min120 at - 1 mA, - 6 V
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor 2SA1576U3HZGT106Q
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT -50V; -150mA Gen Pur. Amplifier
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)