参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT250 MHz
Maximum DC Collector Current500 mA
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage620 mV
DC Collector/Base Gain hfe Min100
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
ImageROHM Semiconductor BCX19HZGT116
Pd - Power Dissipation425 mW
RoHS Details
Part # AliasesBCX19HZG
Factory Pack Quantity3000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS DIGITAL NPN
Moisture Sensitivity Level1 (Unlimited)