参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SCR572D3FRATL
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation10 W
DescriptionBipolar Transistors - BJT NPN 30V 5A 10W TO-252(DPAK)
USHTS8541290095