参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min120
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SCR574D3FRATL
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation10 W
DescriptionBipolar Transistors - BJT NPN 80V 2A 10W TO-252(DPAK)
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)