参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-416FL-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SCR502EBTL
Product CategoryBipolar Transistors - BJT
Unit Weight0.000212 oz
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SCR502EB
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN Digital Transtr Driver
Moisture Sensitivity Level1 (Unlimited)