参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min180
Package / CaseSC-59-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
DescriptionBipolar Transistors - BJT NPN 120V 50MA
BrandROHM Semiconductor
ImageROHM Semiconductor 2SC3906KT146S
Series2SC3906K
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)