参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 5 A
Continuous Collector Current- 5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 160 mV
DC Collector/Base Gain hfe Min120
Package / CaseTO-263AB-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SAR586JFRGTLL
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation40 W
DescriptionBipolar Transistors - BJT TRANS DIGITAL PNP
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)