参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min270
Width1.7 mm
Length2 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SB1731TL
TARIC8541290000
RoHS Details
Unit Weight0.004344 oz
Series2SB1731
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation400 mW
Part # Aliases2SB1731
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP 30V 1.5A
USHTS8541290095