参数项参数值
参数项参数值
DC Current Gain hFE Max480
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage120 mV
DC Collector/Base Gain hfe Min210
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP SOT-23 -0.1A 210 to 480hFE -45V
ManufacturerROHM Semiconductor
ImageROHM Semiconductor BC857BHZGT116
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)