商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max680 at 200 mA, 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD2661T100
TARIC8541290000
RoHS Details
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
Part # Aliases2SD2661
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 12V 2A
USHTS8541290095
