参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max- 32 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min82
Width1.25 mm
Height0.8 mm
Length2 mm
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor 2SA1577T106Q
Unit Weight0.000176 oz
RoHS Details
Series2SA1577
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP 32V 0.5A SOT-323
ManufacturerROHM Semiconductor
Moisture Sensitivity Level1 (Unlimited)