参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 500 mA, 2 V
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor 2SB1590KT146Q
TARIC8541290000
RoHS Details
Unit Weight0.000282 oz
Series2SB1590K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
USHTS8541290095