参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 100 mA, 3 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6.5 V
DC Collector/Base Gain hfe Min270
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
Series2SD1757K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 15V 0.5A
USHTS8541290095