参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width0.8 mm
MXHTS85412999
DC Collector/Base Gain hfe Min270
Height0.7 mm
Length1.6 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-416-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
Series2SC5585
RoHS Details
ImageROHM Semiconductor 2SC5585TL
Product CategoryBipolar Transistors - BJT
Unit Weight0.000212 oz
ManufacturerROHM Semiconductor
SubcategoryTransistors
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SC5585
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 12V 0.5A SOT-416