参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT240 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 3 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 90 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
Package / CaseDFN2020-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SAR542F3TR
TARIC8541290000
RoHS Details
Unit Weight0.001471 oz
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1 W
Part # Aliases2SAR542F3
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT 4.5-5.5V 1ch Nch FET LDO Controllers
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)