参数项参数值
参数项参数值
DC Current Gain hFE Max560 mA
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO20 V
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current200 mA
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.3 V
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR522UBTL
TARIC8541290000
RoHS Details
Series2SCR522UB
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SCR522UB
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT Trans GP BJT NPN 20V 0.2A
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)