参数项参数值
参数项参数值
DC Current Gain hFE Max390 at - 100 mA, - 3 V
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 2.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 2.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SAR544P5T100
TARIC8541290000
Unit Weight0.005464 oz
RoHS Details
Series2SxR
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SAR544P5
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP -80V Vceo -2.5A Ic MPT3
ManufacturerROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)