参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
DC Collector/Base Gain hfe Min270
CNHTS8541210000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SC4102U3HZGT106S
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT H. Volt 120V, 50mA UMT3
USHTS8541290095