参数项参数值
参数项参数值
DC Current Gain hFE Max500 at 100 mA, 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200 at 100 mA, 2 V
MXHTS85412999
KRHTS8541299000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR512P5T100
TARIC8541290000
RoHS Details
Series2SxR
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 30V Vceo 2A Ic MPT3
ManufacturerROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)