在线商城 
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 200 mA, 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.7 mm
Length2 mm
DC Collector/Base Gain hfe Min270
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
CNHTS8541290000
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 12V 2A
ImageROHM Semiconductor 2SD2700TL
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000176 oz
SubcategoryTransistors
Part # Aliases2SD2700
Pd - Power Dissipation800 mW
USHTS8541290095