参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
ImageROHM Semiconductor 2SC4081U3T106Q
RoHS Details
Unit Weight0.003289 oz
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN 50V 0.15A 0.2W SOT-323; SC-70; UMT3
ManufacturerROHM Semiconductor
USHTS8541290095